Title:
Thermal annealing and mechanical characterization study of electroplated copper in silicon trenches
Thermal annealing and mechanical characterization study of electroplated copper in silicon trenches
Author(s)
Song, Yaqin
Advisor(s)
Sitaraman, Suresh K.
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Abstract
Microelectronic systems continue to move to towards 3-D integration to meet the increasing demands, Through-Silicon Vias (TSVs) play an important role in interconnecting stacked silicon dies. Various 3-D integration technologies have been proposed for microelectronic devices. TSV is the technology that can achieve the ultimate goal of 3-D integration. Although progress is being make in the fabrication of TSVs, experimental and theoretical study of their thermomechanical reliability have been widely studied. There still a gap to understand the copper microstructure in TSVs and similar structure. This work focus on how mechanical properties and microstructure change with thermal aging and thermal annealing in copper-filled TSVs and copper-plated silicon trenches. Both samples are fabricated in the cleanroom. Nano-indentation technique is applied to characterize mechanical properties and Electron backscatter diffraction (EBSD) technique used to characterize copper microstructure. Numerical models are created to simulate the thermo-mechanical stresses of copper with isotropic and anisotropic material property.
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Date Issued
2017-05-01
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Text
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Thesis