Title:
Thermal annealing and mechanical characterization study of electroplated copper in silicon trenches
Thermal annealing and mechanical characterization study of electroplated copper in silicon trenches
| dc.contributor.advisor | Sitaraman, Suresh K. | |
| dc.contributor.author | Song, Yaqin | |
| dc.contributor.committeeMember | Bakir, Myhannad S. | |
| dc.contributor.committeeMember | Ume, Charles | |
| dc.contributor.department | Mechanical Engineering | |
| dc.date.accessioned | 2017-06-07T17:49:39Z | |
| dc.date.available | 2017-06-07T17:49:39Z | |
| dc.date.created | 2017-05 | |
| dc.date.issued | 2017-05-01 | |
| dc.date.submitted | May 2017 | |
| dc.date.updated | 2017-06-07T17:49:40Z | |
| dc.description.abstract | Microelectronic systems continue to move to towards 3-D integration to meet the increasing demands, Through-Silicon Vias (TSVs) play an important role in interconnecting stacked silicon dies. Various 3-D integration technologies have been proposed for microelectronic devices. TSV is the technology that can achieve the ultimate goal of 3-D integration. Although progress is being make in the fabrication of TSVs, experimental and theoretical study of their thermomechanical reliability have been widely studied. There still a gap to understand the copper microstructure in TSVs and similar structure. This work focus on how mechanical properties and microstructure change with thermal aging and thermal annealing in copper-filled TSVs and copper-plated silicon trenches. Both samples are fabricated in the cleanroom. Nano-indentation technique is applied to characterize mechanical properties and Electron backscatter diffraction (EBSD) technique used to characterize copper microstructure. Numerical models are created to simulate the thermo-mechanical stresses of copper with isotropic and anisotropic material property. | |
| dc.description.degree | M.S. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1853/58340 | |
| dc.language.iso | en_US | |
| dc.publisher | Georgia Institute of Technology | |
| dc.subject | TSV | |
| dc.subject | Copper | |
| dc.title | Thermal annealing and mechanical characterization study of electroplated copper in silicon trenches | |
| dc.type | Text | |
| dc.type.genre | Thesis | |
| dspace.entity.type | Publication | |
| local.contributor.advisor | Sitaraman, Suresh K. | |
| local.contributor.corporatename | George W. Woodruff School of Mechanical Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isAdvisorOfPublication | 86701d63-9ca5-4060-89f8-aca6e0b267f6 | |
| relation.isOrgUnitOfPublication | c01ff908-c25f-439b-bf10-a074ed886bb7 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
| thesis.degree.level | Masters |