Title:
Mono-layer C-face epitaxial graphene for high frequency electronics
Mono-layer C-face epitaxial graphene for high frequency electronics
Author(s)
Guo, Zelei
Advisor(s)
de Heer, Walter A.
Editor(s)
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Abstract
As the thinnest material ever with high carrier mobility and saturation
velocity, graphene is considered as a candidate for future high speed electronics. After
pioneering research on graphene-based electronics at Georgia Tech, epitaxial graphene
on SiC, along with other synthesized graphene, has been extensively investigated for
possible applications in high frequency analog circuits. With a combined effort from
academic and industrial research institutions, the best cut-off frequency of graphene
radio-frequency (RF) transistors is already comparable to the best result of III-V
material-based devices. However, the power gain performance of graphene transistors
remained low, and the absence of a band gap inhibits the possibility of graphene in
digital electronics. Aiming at solving these problems, this thesis will demonstrate
the effort toward better high frequency power gain performance based on mono-layer
epitaxial graphene on C-face SiC. Besides, a graphene/Si integration scheme will
be proposed that utilizes the high speed potential of graphene electronics and logic
functionality and maturity of Si-CMOS platform at the same time.
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Date Issued
2014-06-04
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Resource Type
Text
Resource Subtype
Dissertation