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School of Physics

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Now showing 1 - 10 of 1038
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    Physics of Morphogenetic Matter
    (Georgia Institute of Technology, 2021-11-08) Gardel, Margaret ; Georgia Institute of Technology. School of Physics ; University of Chicago. Dept. of Physics
    My lab studies how the movement and shape of living cells is controlled by living materials constructed by protein assemblies within the cell interior. In this talk, I will describe my lab’s recent efforts to understand the design principles of the active, soft materials that drive morphogenesis of epithelial tissue. In particular, we are interested in the design principles by which protein-based materials generate, relax, sense and adapt to mechanical force. Here I will describe our current experimental efforts to study the regulation of the shape and size of epithelial cells. If time allows, I will discuss how physical constraints govern cell size regulation in epithelial tissue.
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    Interfacial phenomena in bounded simple liquids
    (Georgia Institute of Technology, 1991-08) Sutton, Stephen P. ; O'Shea, Donald C. ; Physics
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    Particle Image Velocimetry of Collapsing Toroidal Droplets
    (Georgia Institute of Technology, 2015-08-18) Berger, Eric M. ; Kennedy, T. A. Brian ; Fernandez-Nieves, Alberto ; Greco, Edwin ; Physics
    The goal of this study is to explore the mechanism by which unstable toroidal droplets collapse inwardly. As such, particle image velocimetry methods will be employed in obtaining an experimental picture of the velocity field inside of unstable toroidal droplets as they collapse. The inward collapse exhibited by unstable toroidal droplets is unique to the geometry of the torus and is therefore physically interesting. There is currently not an available experimental picture of this collapse, so this study will attempt to fill that void. Ultimately the results of this study will be compared against the currently accessible theoretical pictures of collapsing toroidal droplets, leading to further refinements in the field.
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    Spin Electronics: Magnetic Moments and Amorphous Semiconductors
    (Georgia Institute of Technology, 2012-09-10) Hellman, Frances ; University of California, Berkeley ; Georgia Institute of Technology. School of Physics
    Spin electronics in its broadest definition is the study of systems where both the charge and the spin of the electron play a role. The term was originally intended as a new technological concept, where traditionally the electron’s charge is important because transistors rely on currents and voltages, while the electron’s spin is important only in magnetic materials used for memory; spin electronics represents a new hybrid system. Examples range from technological developments such as MRAM (magnetic random access memory) that are based on magnetic tunnel junctions, to some forms of quantum computing. More broadly, spin electronics can be viewed as the visibility of and strong interactions between charge and spin in highly correlated electron materials such as high Tc superconductors, colossal magnetoresistance manganites, and doped semiconductors near the metal-insulator transition. I will discuss why these materials show such unusual spin-charge properties, and efforts to introduce magnetic moments into semiconducting materials, focusing particularly on our work on amorphous Si doped with magnetic ions such as Gd or Mn. These alloys possess dramatic magnetic and transport properties due to electron-electron and electron-local moment interactions, including enormous (many orders of magnitude) negative magnetoresistance. These amorphous materials provide an important counterpart to the more traditionally studied crystalline magnetically-doped semiconductors.
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    A theoretical analysis of the spin susceptibility tensor and quasiparticle density of states for quasi-one-dimensional superconductors
    (Georgia Institute of Technology, 2001-12) Vaccarella, Cawley D. ; Sá de Melo, Carlos A. R. ; Physics
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    Algebraic structure of central force problems
    (Georgia Institute of Technology, 2002-05) Cooke, Teman H. ; Wood, John L. ; Physics
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    Presidential Young Investigator Award
    (Georgia Institute of Technology, 1999) Chou, Mei-Yin ; Georgia Institute of Technology. School of Physics ; Georgia Institute of Technology. Office of Sponsored Programs ; Georgia Institute of Technology. Office of Sponsored Programs
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    Electronic structure and interlayer coupling in twisted multilayer graphene
    (Georgia Institute of Technology, 2014-01-10) Xian, Lede ; Chou, Mei-Yin ; Zangwill, Andrew ; Conrad, Edward H. ; First, Phillip N. ; Bongiorno, Angelo ; Physics
    It has been shown recently that high-quality epitaxial graphene (EPG) can be grown on the SiC substrate that exhibits interesting physical properties and has great advantages for varies device applications. In particular, the multilayer graphene films grown on the C-face show rotational disorder. It is expected that the twisted layers exhibit unique new physics that is distinct from that of either single layer graphene or graphite. In this work, by combining density functional and tight-binding model calculations, we investigate the electric field and doping effects on twisted bilayer graphene (TBG), multiple layer effects on twisted triple-layer graphene, and wave packet propagation properties of TBG. Though these studies, we obtain a comprehensive description of the interesting interlayer interaction in this twisted multilayer graphene system.
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    Theoretical considerations of the contribution of M-shell electrons to orbital electron capture
    (Georgia Institute of Technology, 1963-05) Hubbard, William Marshall ; Brewer, Harold R. ; Physics
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    Numerical modeling and fabrication of high efficiency crystalline silicon solar cells
    (Georgia Institute of Technology, 2013-06-24) Renshaw, John ; Rohatgi, Ajeet ; DeHeer, Walt ; First, Phillip ; Conrad, Ed ; Kippelen, Bernard ; Physics
    Crystalline silicon solar cells translate energy from the sun into electrical energy via the photoelectric effect. This technology has the potential to simultaneously reduce carbon emissions and our dependence on fossil fuels. The cost of photovoltaic energy, however, is still higher than the cost of electricity off of the grid which hampers this technologies adoption. Raising solar cell efficiency without significantly raising the cost is crucial to lowering the cost of photovoltaic produced energy. One technology which holds promise to increase solar cell efficiency is a selective emitter solar cell. In this work the benefit of selective emitter solar cells is quantified through numerical modeling. Further, the use of ultraviolet laser to create a laser doped selective emitter solar cell is explored. Through optimization of the laser doping process to minimize laser induced defects it is shown that this process can increase solar cell efficiency to over 19.1%. Additionally, 2D and 3D numerical modeling are performed to determine the limitations screen printed interdigitated back contact solar cells and the practical efficiency limit for crystalline Si solar cells.