Title:
Mono-layer C-face epitaxial graphene for high frequency electronics

dc.contributor.advisor de Heer, Walter A.
dc.contributor.author Guo, Zelei
dc.contributor.committeeMember Jiang, Zhigang
dc.contributor.committeeMember Conrad, Edward H.
dc.contributor.committeeMember First, Phillip N.
dc.contributor.committeeMember Cressler, John D.
dc.contributor.department Physics
dc.date.accessioned 2014-08-27T13:38:24Z
dc.date.available 2014-08-27T13:38:24Z
dc.date.created 2014-08
dc.date.issued 2014-06-04
dc.date.submitted August 2014
dc.date.updated 2014-08-27T13:38:24Z
dc.description.abstract As the thinnest material ever with high carrier mobility and saturation velocity, graphene is considered as a candidate for future high speed electronics. After pioneering research on graphene-based electronics at Georgia Tech, epitaxial graphene on SiC, along with other synthesized graphene, has been extensively investigated for possible applications in high frequency analog circuits. With a combined effort from academic and industrial research institutions, the best cut-off frequency of graphene radio-frequency (RF) transistors is already comparable to the best result of III-V material-based devices. However, the power gain performance of graphene transistors remained low, and the absence of a band gap inhibits the possibility of graphene in digital electronics. Aiming at solving these problems, this thesis will demonstrate the effort toward better high frequency power gain performance based on mono-layer epitaxial graphene on C-face SiC. Besides, a graphene/Si integration scheme will be proposed that utilizes the high speed potential of graphene electronics and logic functionality and maturity of Si-CMOS platform at the same time.
dc.description.degree Ph.D.
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/52268
dc.language.iso en_US
dc.publisher Georgia Institute of Technology
dc.subject SiC
dc.subject RF
dc.subject SOI
dc.subject Epitaxial graphene
dc.subject High frequency
dc.subject Maximum oscillation frequency
dc.subject Dielectric
dc.subject Top gate
dc.subject Transistor
dc.subject Wafer bonding
dc.subject Smart-cut
dc.subject Nanoribbon
dc.title Mono-layer C-face epitaxial graphene for high frequency electronics
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor de Heer, Walter A.
local.contributor.corporatename College of Sciences
local.contributor.corporatename School of Physics
relation.isAdvisorOfPublication 8ab28407-deb7-4b22-bb02-63fe30f19375
relation.isOrgUnitOfPublication 85042be6-2d68-4e07-b384-e1f908fae48a
relation.isOrgUnitOfPublication 2ba39017-11f1-40f4-9bc5-66f17b8f1539
thesis.degree.level Doctoral
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