Shen, Shyh-Chiang

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III-Nitride Power Electronics

2017-02-28 , Shen, Shyh-Chiang

The III-Nitride (III-N) materials have enabled several important technology breakthroughs in recent years, most notably as the building semiconductors for the solid-state lighting technology and next-generation detecting deep ultraviolet (DUV) photon emitters and detectors for applications in water sanitation, bio-detection, and astrophysics studies. The wide bandgap properties and high electron saturation velocity in III-N materials also attracted extensive R&D efforts in high-power millimeter-wave and radio-frequency electronic circuits. Today, III-N HFETs are highly sought in energy-efficient DC-DC converters from 12V up to 1.2-kV. As a complementary device technology, III-N heterojunction bipolar transistors (HBTs) and related bipolar switches offer new opportunities for ultra-high-power operation because of their normally off and vertical current conduction capabilities. This talk will present a summary of III-N electronic device development for power applications. We have demonstrated state-of-the-art InGaN HBTs at Georgia Tech and high-performance GaN PIN rectifiers with device characteristics approaching the theoretical limit for GaN materials. With significant progress in the development of III-N transistors and vertical bipolar switches, GaN-based power electronic devices could offer a disruptive technology basis for the future high-temperature, high-power electronic components in applications such as electric vehicles, HVAC systems, and future power grids.

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Development of high-voltage GaN-based dc-dc converter for radio isotope micro-power systems

2010-10-12 , Shen, Shyh-Chiang , Dupuis, Russell D. , Ryou, Jae-Hyun

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Development of high power NPN GaN/InGaN double-heterojunction bipolar transistor

2011-08-31 , Dupuis, Russell D. , Shen, Shyh-Chiang , Ryou, Jae-Hyun , Yoder, P. Douglas

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E-mode III-n high-voltage transistor development

2011-03-01 , Shen, Shyh-Chiang , Dupuis, Russell D. , Ryou, Jae-Hyun