Title:
Development of high power NPN GaN/InGaN double-heterojunction bipolar transistor
Development of high power NPN GaN/InGaN double-heterojunction bipolar transistor
Author(s)
Dupuis, Russell D.
Shen, Shyh-Chiang
Ryou, Jae-Hyun
Yoder, P. Douglas
Shen, Shyh-Chiang
Ryou, Jae-Hyun
Yoder, P. Douglas
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Abstract
Sponsor
National Science Foundation (U.S.)
Date Issued
2011-08-31
Extent
Resource Type
Text
Resource Subtype
Technical Report