Title:
III-Nitride Power Electronics
III-Nitride Power Electronics
No Thumbnail Available
Author(s)
Shen, Shyh-Chiang
Advisor(s)
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
The III-Nitride (III-N) materials have enabled several important technology breakthroughs in recent years, most notably as the building semiconductors for the solid-state lighting technology and next-generation detecting deep ultraviolet (DUV) photon emitters and detectors for applications in water sanitation, bio-detection, and astrophysics studies. The wide bandgap properties and high electron saturation velocity in III-N materials also attracted extensive R&D efforts in high-power millimeter-wave and radio-frequency electronic circuits. Today, III-N HFETs are highly sought in energy-efficient DC-DC converters from 12V up to 1.2-kV. As a complementary device technology, III-N heterojunction bipolar transistors (HBTs) and related bipolar switches offer new opportunities for ultra-high-power operation because of their normally off and vertical current conduction capabilities. This talk will present a summary of III-N electronic device development for power applications. We have demonstrated state-of-the-art InGaN HBTs at Georgia Tech and high-performance GaN PIN rectifiers with device characteristics approaching the theoretical limit for GaN materials. With significant progress in the development of III-N transistors and vertical bipolar switches, GaN-based power electronic devices could offer a disruptive technology basis for the future high-temperature, high-power electronic components in applications such as electric vehicles, HVAC systems, and future power grids.
Sponsor
Date Issued
2017-02-28
Extent
56:07 minutes
Resource Type
Moving Image
Resource Subtype
Lecture