Title:
Plasma Processing of Thin Films [Part I and II]
Plasma Processing of Thin Films [Part I and II]
dc.contributor.author | Hess, Dennis W. | |
dc.contributor.corporatename | Georgia Institute of Technology. Institute for Electronics and Nanotechnology | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Chemical and Biomolecular Engineering | en_US |
dc.date.accessioned | 2014-09-10T15:34:30Z | |
dc.date.available | 2014-09-10T15:34:30Z | |
dc.date.issued | 2014-09-02 | |
dc.description | Dennis W. Hess is the Thomas C. DeLoach Jr., Professor of Chemical and Biomolecular Engineering at the Georgia Institute of Technology. His research interests include thin films, surfaces, and interfaces, especially as applied to microelectronics and polymer processing. He received a B.S. in Chemistry from Albright College, and M.S. and Ph.D. degrees in Physical Chemistry from Lehigh University. | en_US |
dc.description | Presented on September 2, 2014 and September 4, 2014 at 12:00 p.m. in the Marcus Nanotechnology Building Conference Room 1117. | en_US |
dc.description | Runtime: 49:03 minutes | en_US |
dc.description | Runtime: 30:14 minutes | |
dc.description.abstract | Fabrication of devices and structures for integrated circuits, sensors, photonics, and MEMS/NEMS requires layers of patterned thin films. For nearly all film materials, patterns are generated by lithographic processes, followed by plasma etching. Plasmas or glow discharges are ionized gases that contain electrons, ions, neutral species and photons that promote chemical reactions and ensure that anisotropic etch profiles can be obtained. This tutorial will discuss the fundamental physics and chemistry of plasmas, plasma reactor configurations, unique properties of plasmas that allow thin film processing for a variety of applications, and approaches to control etch rates, profiles, and etch selectivity. | en_US |
dc.embargo.terms | null | en_US |
dc.format.extent | 49:03 minutes | |
dc.format.extent | 30:14 minutes | |
dc.identifier.uri | http://hdl.handle.net/1853/52351 | |
dc.relation.ispartof | IEN Technical Seminars | |
dc.relation.ispartof | Advanced Fabrication | |
dc.subject | Device fabrication | en_US |
dc.subject | Integrated circuits | en_US |
dc.subject | Lithography | en_US |
dc.subject | MEMS | en_US |
dc.subject | Plasma etching | en_US |
dc.title | Plasma Processing of Thin Films [Part I and II] | en_US |
dc.type | Moving Image | |
dc.type.genre | Presentation | |
dspace.entity.type | Publication | |
local.contributor.author | Hess, Dennis W. | |
local.contributor.corporatename | Institute for Electronics and Nanotechnology (IEN) | |
relation.isAuthorOfPublication | d67d8fd4-bfc1-40ca-a898-03b84faf1c0d | |
relation.isOrgUnitOfPublication | 5d316582-08fe-42e1-82e3-9f3b79dd6dae |
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