Title:
Development of RIE-Textured Silicon Solar Cells
Development of RIE-Textured Silicon Solar Cells
Author(s)
Damiani, Benjamin Mark
Ludemann, R.
Ruby, D. S.
Zaidi, S. H.
Rohatgi, Ajeet
Ludemann, R.
Ruby, D. S.
Zaidi, S. H.
Rohatgi, Ajeet
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Abstract
A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before and 3.9 % after SiN deposition.
A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma damage
removal treatments are tested to optimize low
lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased & due to the RIE texture proved
superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique,
especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SFS makes this
process attractive for mass production.
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Date Issued
2000-09
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Resource Type
Text
Resource Subtype
Proceedings