Title:
Development of RIE-Textured Silicon Solar Cells
Development of RIE-Textured Silicon Solar Cells
| dc.contributor.author | Damiani, Benjamin Mark | en_US |
| dc.contributor.author | Ludemann, R. | en_US |
| dc.contributor.author | Ruby, D. S. | en_US |
| dc.contributor.author | Zaidi, S. H. | en_US |
| dc.contributor.author | Rohatgi, Ajeet | en_US |
| dc.contributor.corporatename | Fraunhofer-Institut für Solare Energiessysteme | en_US |
| dc.contributor.corporatename | Sandia National Laboratories | en_US |
| dc.contributor.corporatename | Gratings Inc. | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education | en_US |
| dc.date.accessioned | 2008-12-16T17:08:44Z | |
| dc.date.available | 2008-12-16T17:08:44Z | |
| dc.date.issued | 2000-09 | |
| dc.description | Presented at the 28th IEEE Photovoltaic Specialists Conference; Anchorage, Alaska; September, 2000. ©2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | en_US |
| dc.description.abstract | A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before and 3.9 % after SiN deposition. A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma damage removal treatments are tested to optimize low lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased & due to the RIE texture proved superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique, especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SFS makes this process attractive for mass production. | en_US |
| dc.identifier.uri | http://hdl.handle.net/1853/26173 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.subject | Solar cells | en_US |
| dc.subject | Silicon solar cells | en_US |
| dc.subject | Reactive Ion Etching (RIE) | en_US |
| dc.title | Development of RIE-Textured Silicon Solar Cells | en_US |
| dc.type | Text | |
| dc.type.genre | Proceedings | |
| dspace.entity.type | Publication | |
| local.contributor.author | Rohatgi, Ajeet | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| local.contributor.corporatename | University Center of Excellence for Photovoltaics | |
| relation.isAuthorOfPublication | b7cc3b55-ebc6-42fd-b859-107fb271b10d | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 | |
| relation.isOrgUnitOfPublication | 93ace8d3-7479-459e-b63d-27aff6118464 |
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