Title:
Synthesis of Si-Ge Oxide Nanowires via the Transformation of of Si-Ge Thin Films with Self-Assembled Au Catalysts
Synthesis of Si-Ge Oxide Nanowires via the Transformation of of Si-Ge Thin Films with Self-Assembled Au Catalysts
Author(s)
He, J. H.
Wu, T. H.
Hsin, C. L.
Chen, L. J.
Wang, Z. L. (Zhong Lin)
Wu, T. H.
Hsin, C. L.
Chen, L. J.
Wang, Z. L. (Zhong Lin)
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Abstract
A technique has been developed to transform a Si-Ge thin film into Si-Ge oxide nanowires with the assistance of Au particles
through a three-step annealing process. A honeycomb network of Au colloidal nanoparticles was self-assembled; 400°C annealing
removes the surface surfactant; 800°C annealing forms hexagonally self-assembled Au particles on the thin-film surface; finally,
a 1075°C annealing results in the growth of oxide nanowires on the surfaces of Au particles. Synthesized nanowires have an
emission peak at 3.3 eV. This technique is useful for growing silicon oxide nanowires with a tunable amount of Ge doping.
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Date Issued
2005
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519854 bytes
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Text
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Article