Title:
Synthesis of Si-Ge Oxide Nanowires via the Transformation of of Si-Ge Thin Films with Self-Assembled Au Catalysts

dc.contributor.author He, J. H.
dc.contributor.author Wu, T. H.
dc.contributor.author Hsin, C. L.
dc.contributor.author Chen, L. J.
dc.contributor.author Wang, Z. L. (Zhong Lin)
dc.date.accessioned 2006-04-14T14:14:36Z
dc.date.available 2006-04-14T14:14:36Z
dc.date.issued 2005
dc.description.abstract A technique has been developed to transform a Si-Ge thin film into Si-Ge oxide nanowires with the assistance of Au particles through a three-step annealing process. A honeycomb network of Au colloidal nanoparticles was self-assembled; 400°C annealing removes the surface surfactant; 800°C annealing forms hexagonally self-assembled Au particles on the thin-film surface; finally, a 1075°C annealing results in the growth of oxide nanowires on the surfaces of Au particles. Synthesized nanowires have an emission peak at 3.3 eV. This technique is useful for growing silicon oxide nanowires with a tunable amount of Ge doping. en
dc.format.extent 519854 bytes
dc.format.mimetype application/pdf
dc.identifier.citation Electrochemical and Solid-State Letters, 8 (10) G254-G257 (2005)
dc.identifier.uri http://hdl.handle.net/1853/9301
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.subject Silicon oxide nanowires en
dc.subject Si-Ge films en
dc.subject Synthesized nanowires en
dc.title Synthesis of Si-Ge Oxide Nanowires via the Transformation of of Si-Ge Thin Films with Self-Assembled Au Catalysts en
dc.type Text
dc.type.genre Article
dspace.entity.type Publication
local.contributor.corporatename School of Materials Science and Engineering
local.contributor.corporatename College of Engineering
relation.isOrgUnitOfPublication 21b5a45b-0b8a-4b69-a36b-6556f8426a35
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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