Title:
Fabrication, Characterization, and Modeling of Silicon-on-Insulator Field-Effect-Transistor Nanoribbon Biosensors
Fabrication, Characterization, and Modeling of Silicon-on-Insulator Field-Effect-Transistor Nanoribbon Biosensors
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Author(s)
Vogel, Eric M.
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Abstract
For over 30 years, field effect transistors (FETs) have been used as sensors. In the past,
Ion-Sensitive-FETs (ISFET) were based on bulk Metal-Oxide-Semiconductor (MOS) FET
designs and the device was gated by biasing the electrolyte through the reference electrode.
Recently, functionalized silicon nanowires and silicon-on-insulator (SOI) devices have been
introduced for their greater sensitivity in detecting proteins, DNA and even single viruses.
This work focuses on a variety of issues that impact the properties of SOI FET nanoribbon
sensors. The ability to stabilize and control the attachment of cells on the sensor surface is
critical. Therefore, the reliability and reproducibility of self-assembled-monolayers such as
aminosilanes will be presented. Biological solutions consist of protein or DNA in an
electrolytic solution containing salt ions. Some of these ions, such as Na, have long been
known to cause instabilities in MOS devices. The effect of mobile ions on SOI-based sensors
will be presented. The SOI-based sensor structure results in the electrolyte voltage being
capacitively coupled to the back gate voltage. The impact of this coupling on sensor
response will be described. Physically realistic SPICE models were developed and illustrate
the response of both pH and biosensors with a multi-gate model. The model demonstrates
good agreement to experimental data including the impact of Debye screening and site
binding charge.
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Date Issued
2013-08-27
Extent
50:12 minutes
Resource Type
Moving Image
Resource Subtype
Lecture