Title:
Investigation of Spatially Non-Uniform Defect Passivation in EFG Si by Scanning Photoluminescence Technique
Investigation of Spatially Non-Uniform Defect Passivation in EFG Si by Scanning Photoluminescence Technique
Author(s)
Nakayashiki, Kenta
Rohatgi, Ajeet
Tarasov, Igor
Ostapenko, Sergei
Gedvilas, Lynn
Keyes, Brian
Bathey, Bala R.
Kalejs, Juris P.
Rohatgi, Ajeet
Tarasov, Igor
Ostapenko, Sergei
Gedvilas, Lynn
Keyes, Brian
Bathey, Bala R.
Kalejs, Juris P.
Advisor(s)
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
This paper shows that both hydrogenation of defects from SiN(x) coating and thermally-induced dehydrogenation of defects are rapid and occur simultaneously in EFG Si during cell processing. Room-temperature scanning
photoluminescence mappings, before and after the SiN(x) induced hydrogenation, revealed that hydrogenation of defective regions is effective and pronounced, with more than an order of magnitude increase in lifetime, compared to the rest of the bulk. In addition, FTIR measurements showed the concentration of bonded hydrogen in the SiN(x) film decreases with the increase in annealing temperature and time. However, the rate of release of hydrogen from the SiN(x) film decreases sharply after the first few seconds. Based on this understanding, a process was developed for a co-firing of SiN(x) film and screen-printed Al and Ag in
RTP unit, which produced 4 cm(2) EFG Si cell with highest efficiency of 16.1%.
Sponsor
Date Issued
2005-01
Extent
Resource Type
Text
Resource Subtype
Proceedings