Next-Generation Vertical GaN Power Devices Using Selective-Area Doping Techniques

Pavlidis, Spyridon

Title:

Next-Generation Vertical GaN Power Devices Using Selective-Area Doping Techniques

dc.contributor.author	Pavlidis, Spyridon	en_US
dc.contributor.corporatename	Georgia Institute of Technology. Institute for Electronics and Nanotechnology	en_US
dc.contributor.corporatename	Georgia Institute of Technology. School of Electrical and Computer Engineering	en_US
dc.contributor.corporatename	North Carolina State University	en_US
dc.date.accessioned	2022-10-25T02:59:40Z
dc.date.available	2022-10-25T02:59:40Z
dc.date.issued	2022-09-13
dc.description	Presented on September 13, 2022 from 12:00 p.m.-1:00 p.m. in the Marcus Nanotechnology Building, Rooms 1116-1118, Georgia Tech, Atlanta, GA.	en_US
dc.description	Spyridon Pavlidis is an assistant professor in the Department of Electrical and Computer Engineering at North Carolina State University, and the principal investigator for the Laboratory for Electronics in Advanced Devices and Systems (NCSU LEADS). He is affiliated with NCSU’s PowerAmerica, FREEDM and ASSIST Research Centers. He was previously a post-doctoral researcher in the School of Materials Science and Engineering at the Georgia Institute of Technology. Pavlidis received a Ph.D. in electrical and computer engineering from Georgia Tech, and an M.Eng in electrical and electronics engineering from Imperial College London. His research interests lie at the intersection of semiconductor devices, novel materials and circuits with applications for high-frequency and power electronics, as well as sensing. He is the recipient of the 2022 NSF CAREER Award, the 2022 Bennett Fellowship, and the 2015 EuMW Young Engineer Prize. He is an active member of the IEEE, serving on several technical program committees, as well as on the IEEE MTT-S Technical Committee on Microwave and Millimeter-Wave Solid State Devices.	en_US
dc.description	Runtime: 59:59 minutes	en_US
dc.description.abstract	In recent years, there has been a surge of research and commercial interest in gallium nitride (GaN)-based devices for power conversion applications. This is largely motivated by the wide bandgap of GaN, which offers a unipolar limit of performance that is larger than that of silicon and silicon carbide. While lateral transistors have already been commercially adopted, high power applications require vertical devices to control chip size. Recent improvements in native GaN substrate quality and epitaxy have unlocked the potential of vertical GaN power devices, but effective strategies for selective area doping, in particular p-type doping, remain a major challenge. In this talk, two vertical devices that rely on selective area doping will be discussed. Firstly, the use of magnesium (Mg) implantation and ultra-high pressure annealing (UHPA) will be explored for the development of GaN junction barrier Schottky (JBS) diodes. Effective crystal repair and carrier activation post implantation via UHPA, which is a capless technique, will be demonstrated. The impact of UHPA on the formation of rectifying contacts will then be investigated, followed by the key demonstration of a 900 V GaN JBS diode with state-of-the-art specific on resistance (RON,sp). The second device that will be studied is the GaN superjunction (SJ) diode. Here, lateral polar junctions (LPJs) are adopted. This approach exploits the natural doping asymmetry between the N-polar and Ga-polar crystal orientations to simultaneously grow N-polar GaN for the n-type pillars and Ga-polar GaN for the p-type pillars, which represents a uniquely different strategy compared to conventional semiconductor technologies. It will be shown that the N-polar GaN camel diode can be used to tune the barrier height and reduce leakage. In this way, the first charge-balanced GaN superjunction device will be demonstrated. All in all, these innovations represent key experimental building blocks for future high-power GaN power devices.	en_US
dc.format.extent	59:59 minutes
dc.identifier.uri	http://hdl.handle.net/1853/67533
dc.language.iso	en_US	en_US
dc.publisher	Georgia Institute of Technology	en_US
dc.relation.ispartofseries	Nano@Tech Lecture Series
dc.subject	Gallium nitride	en_US
dc.subject	GaN	en_US
dc.subject	Selective area doping	en_US
dc.title	Next-Generation Vertical GaN Power Devices Using Selective-Area Doping Techniques	en_US
dc.type	Moving Image
dc.type.genre	Lecture
dspace.entity.type	Publication
local.contributor.corporatename	Institute for Electronics and Nanotechnology (IEN)
local.relation.ispartofseries	Nano@Tech Lecture Series
relation.isOrgUnitOfPublication	5d316582-08fe-42e1-82e3-9f3b79dd6dae
relation.isSeriesOfPublication	accfbba8-246e-4389-8087-f838de8956cf