Title:
Reliable fine-pitch chip-to-substrate copper interconnections with high-through assembly and high power-handling

dc.contributor.advisor Tummala, Rao R.
dc.contributor.advisor Antoniou, Antonia
dc.contributor.author Shahane, Ninad Makarand
dc.contributor.committeeMember Thadhani, Naresh
dc.contributor.committeeMember Singh, Preet
dc.contributor.committeeMember Smet, Vanessa
dc.contributor.committeeMember Raj, P. M.
dc.contributor.department Materials Science and Engineering
dc.date.accessioned 2019-08-21T13:49:11Z
dc.date.available 2019-08-21T13:49:11Z
dc.date.created 2018-08
dc.date.issued 2018-07-27
dc.date.submitted August 2018
dc.date.updated 2019-08-21T13:49:11Z
dc.description.abstract The objectives of this work are to design and demonstrate novel chip-to-package substrate Cu-based interconnections without solders at 20µm pitch for power handling at current densities exceeding 10E5 A/cm2, high-throughput manufacturability, and thermomechanical reliability without cracking low-K on-chip dielectrics. To realize these objectives, two approaches are proposed, based on design of nanoscale bonding interfaces for assembly throughput, and electrical, thermal and reliability performances. The first approach utilizes novel Au-based bimetallic thin-films applied on Cu bumps and pads to prevent oxidation and enhance bonding reactivity. This approach focuses on thin-film interdiffusion in nanocrystalline Cu-Ni/Pd-Au layers and the reaction kinetics behind intermetallic compound (IMC) formation at the bonded interfaces. A high-speed thermocompression assembly process is developed and validated to boost throughput. Furthermore, the stability of these interconnection systems is demonstrated through extensive thermomechanical and electro migration reliability testing. The second approach introduces low-modulus nanocopper foam caps on bulk Cu micro-bumps to act as compliant and reactive bonding interfaces. A fundamental understanding of this sintering process is proposed and contrasted to that of conventional nanoparticle-based systems. Using co-electrodeposition techniques, patterned nano-Cu foam capped interconnections are fabricated and a first assembly of such compliant interconnections is demonstrated. In conclusion, these unique Cu interconnection technologies address cost, manufacturability, and scalability and therefore, have the potential to become the next interconnection nodes for high-performance systems.
dc.description.degree Ph.D.
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/61634
dc.language.iso en_US
dc.publisher Georgia Institute of Technology
dc.subject Interconnections
dc.subject Flipchip
dc.subject Metallurgy
dc.subject Nanocopper foams
dc.subject Nanoporous
dc.subject Thermocompression bonding
dc.subject Reliability
dc.subject Sintering
dc.title Reliable fine-pitch chip-to-substrate copper interconnections with high-through assembly and high power-handling
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Antoniou, Antonia
local.contributor.advisor Tummala, Rao R.
local.contributor.corporatename School of Materials Science and Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 522a0555-dbbb-4e12-bfcf-ee83d6874a39
relation.isAdvisorOfPublication fe05ddb2-e957-4584-ac88-58a197df62aa
relation.isOrgUnitOfPublication 21b5a45b-0b8a-4b69-a36b-6556f8426a35
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
thesis.degree.level Doctoral
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