Title:
Pattern-integrated interference lithography instrumentation
Pattern-integrated interference lithography instrumentation
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Author(s)
Burrow, Guy M.
Leibovici, Matthieu C. R.
Kummer, J. W.
Gaylord, Thomas K.
Leibovici, Matthieu C. R.
Kummer, J. W.
Gaylord, Thomas K.
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Abstract
Multi-beam interference (MBI) provides the ability to form a wide range of sub-micron periodic optical-intensity distributions with applications to a variety of areas, including photonic crystals (PCs), nanoelectronics, biomedical structures, optical trapping, metamaterials, and numerous subwavelength structures. Recently, pattern-integrated interference lithography (PIIL) was presented as a new lithographic method that integrates superposed pattern imaging with interference lithography in a single-exposure step. In the present work, the basic design and systematic implementation of a pattern-integrated interference exposure system (PIIES) is presented to realize PIIL by incorporating a projection imaging capability in a novel three-beam interference configuration. A fundamental optimization methodology is presented to model the system and predict MBI-patterning performance. To demonstrate the PIIL method, a prototype PIIES experimental configuration is presented, including detailed alignment techniques and experimental procedures. Examples of well-defined PC structures, fabricated with a PIIES prototype, are presented to demonstrate the potential of PIIL for fabricating dense integrated optical circuits, as well as numerous other subwavelength structures.
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2012-06
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Article