Title:
Synthesis and characterization of Zn₁₋ₓMnₓO nanowires
Synthesis and characterization of Zn₁₋ₓMnₓO nanowires
| dc.contributor.author | Zhang, Xiaomei | |
| dc.contributor.author | Zhang, Yue | |
| dc.contributor.author | Wang, Z. L. (Zhong Lin) | |
| dc.contributor.author | Mai, Wenjie | |
| dc.contributor.author | Gu, Yudong | |
| dc.contributor.author | Chu, Wangsheng | |
| dc.contributor.author | Wu, Ziyu | |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Materials Science and Engineering | |
| dc.contributor.corporatename | Chinese Academy of Sciences. Beijing Synchrotron Radiation Facility | |
| dc.contributor.corporatename | Chinese Academy of Sciences. Institute of High Energy Physics | |
| dc.contributor.corporatename | University of Science and Technology Beijing. Dept. of Materials Physics and Chemistry | |
| dc.contributor.corporatename | University of Science and Technology Beijing. State Key Laboratory for Advanced Metals and Materials | |
| dc.date.accessioned | 2009-04-03T14:38:48Z | |
| dc.date.available | 2009-04-03T14:38:48Z | |
| dc.date.issued | 2008-04-21 | |
| dc.description | ©2008 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/92/162102/1 | en |
| dc.description | DOI:10.1063/1.2905274 | |
| dc.description.abstract | Mn doped ZnO nanowires (NWs) were fabricated by a one-step vapor-solid process at 500°C. The doped Mn exists in the wurtzite lattice as substitutional atom without forming secondary phases. X-ray absorption near-edge structure reveals that the doped Mn atoms occupy the Zn sites, and they lead to an expansion in lattice constants. The I-V characteristic of a single Zn₁₋ₓMnₓO NW shows a typical Ohmic contact with gold electrodes. The as-received NWs could be suitable for studying spintronics in one-dimensional diluted magnetic semiconductors. | en |
| dc.identifier.citation | Applied Physics Letters, 92 (2008) 162102 | en |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/1853/27470 | |
| dc.language.iso | en_US | en |
| dc.publisher | Georgia Institute of Technology | en |
| dc.publisher.original | American Institute of Physics | |
| dc.subject | Electrodes | en |
| dc.subject | Gold | en |
| dc.subject | II-VI semiconductors | en |
| dc.subject | Lattice constants | en |
| dc.subject | Manganese | en |
| dc.subject | Nanotechnology | en |
| dc.subject | Nanowires | en |
| dc.subject | Ohmic contacts | en |
| dc.subject | Semiconductor doping | en |
| dc.subject | XANES | en |
| dc.subject | Zinc compounds | en |
| dc.title | Synthesis and characterization of Zn₁₋ₓMnₓO nanowires | en |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.corporatename | School of Materials Science and Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isOrgUnitOfPublication | 21b5a45b-0b8a-4b69-a36b-6556f8426a35 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |