Title:
Synthesis and characterization of Zn₁₋ₓMnₓO nanowires
Synthesis and characterization of Zn₁₋ₓMnₓO nanowires
Authors
Zhang, Xiaomei
Zhang, Yue
Wang, Z. L. (Zhong Lin)
Mai, Wenjie
Gu, Yudong
Chu, Wangsheng
Wu, Ziyu
Zhang, Yue
Wang, Z. L. (Zhong Lin)
Mai, Wenjie
Gu, Yudong
Chu, Wangsheng
Wu, Ziyu
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Abstract
Mn doped ZnO nanowires (NWs) were fabricated by a one-step vapor-solid process at 500°C. The doped Mn exists in the wurtzite lattice as substitutional atom without forming secondary phases. X-ray absorption near-edge structure reveals that the doped Mn atoms occupy the Zn sites, and they lead to an expansion in lattice constants. The I-V characteristic of a single Zn₁₋ₓMnₓO NW shows a typical Ohmic contact with gold electrodes. The as-received NWs could be suitable for studying spintronics in one-dimensional diluted magnetic semiconductors.
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2008-04-21
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