Title:
Method of Manufacture Using Complementary Conductivity-Selective Wet-Etching Techniques for III-Nitride Materials and Devices
Method of Manufacture Using Complementary Conductivity-Selective Wet-Etching Techniques for III-Nitride Materials and Devices
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Abstract
Methods for wet-etching semiconductor samples and devices fabricated from the same are disclosed. The methods can be for selectively wet-etching a semiconductor sample comprising selecting a liquid-phase solution such that when the semiconductor sample is etched with the liquid-phase solution, at least a portion of one of a first doped region or a second doped region is etched at a greater rate than at least a portion of the other of the first doped region or the second doped region; and wet-etching, with the liquid-phase solution, the at least a portion of one of the first doped region or the second doped region at a first etch rate and the at least a portion of the other of the first doped region or the second doped region at a second etch rate; wherein the first etch rate can be greater than the second etch rate.
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Date Issued
12/7/2021