Title:
Method of Manufacture Using Complementary Conductivity-Selective Wet-Etching Techniques for III-Nitride Materials and Devices

dc.contributor.patentcreator Shen, Shyh-Chiang
dc.contributor.patentcreator DetchProhm, Theeradetch
dc.contributor.patentcreator Dupuis, Russell Dean
dc.contributor.patentcreator Park, Young Jae
dc.contributor.patentcreator Moreno, Oliver
dc.date.accessioned 2022-07-08T14:21:42Z
dc.date.available 2022-07-08T14:21:42Z
dc.date.filed 3/23/2018
dc.date.issued 12/7/2021
dc.description.abstract Methods for wet-etching semiconductor samples and devices fabricated from the same are disclosed. The methods can be for selectively wet-etching a semiconductor sample comprising selecting a liquid-phase solution such that when the semiconductor sample is etched with the liquid-phase solution, at least a portion of one of a first doped region or a second doped region is etched at a greater rate than at least a portion of the other of the first doped region or the second doped region; and wet-etching, with the liquid-phase solution, the at least a portion of one of the first doped region or the second doped region at a first etch rate and the at least a portion of the other of the first doped region or the second doped region at a second etch rate; wherein the first etch rate can be greater than the second etch rate.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L 21/30612
dc.identifier.cpc H01L 21/30635
dc.identifier.patentapplicationnumber US 16/496,782
dc.identifier.patentnumber 11195722
dc.identifier.uri http://hdl.handle.net/1853/67068
dc.title Method of Manufacture Using Complementary Conductivity-Selective Wet-Etching Techniques for III-Nitride Materials and Devices
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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