Subtractive Etching of Cu with Hydrogen-Based Plasmas

Levitin, Galit

Title:

Subtractive Etching of Cu with Hydrogen-Based Plasmas

dc.contributor.author	Levitin, Galit
dc.contributor.corporatename	Georgia Institute of Technology. Nanotechnology Research Center
dc.contributor.corporatename	Georgia Institute of Technology. School of Chemical and Biomolecular Engineering
dc.date.accessioned	2011-03-10T14:46:16Z
dc.date.available	2011-03-10T14:46:16Z
dc.date.issued	2011-02-22
dc.description	Dr. Galit Levitin from the School of Chemical and Biomolecular Engineering at Georgia Tech, presented a lecture at the Nano@Tech Meeting on February 22, 2011 at 12 noon in room 1116 of the Marcus Nanotechnology Building.	en_US
dc.description	Dr. Galit Levitin was born in Tashkent, the capital of Uzbekistan (former Soviet Union Republic). In 1990 she immigrated to Israel, where she completed most of her studies. She received her M.S. in chemistry from the Technion-Israel Institute of Technology in 1997, and later a PhD in electrochemistry from the Technion-Israel Institute of Technology in 2001. She then worked as a Senior Process Engineer at a startup company developing optical technology for Optical Broadband Communications. Dr. Levitin came to Georgia Tech as a post-doctoral researcher in the Prof. Hess group in 2002. In 2004 she became a Research Scientist at the School of Chemical and Biomolecular Engineering. Her research interests lie in the research of the thin film applications and surface treatment and modifications. Her past research included development of novel applications of supercritical fluids to semiconductor processing and medical sterilizations and disinfections. Currently Dr. Levitin is actively involved in ongoing Hess’s group research projects such as development of novel plasma based approaches to copper pattering, graphene growth and surface modification, formation of biocidal films and use of supercritical fluids for nanoparticles deposition.
dc.description	Runtime: 38:46 minutes
dc.description.abstract	Beginning at the 130 nm node, copper (Cu) interconnection layers were introduced to replace conventional Al layers in order to reduce the wiring resistance in logic devices. Due to the inability to form volatile etch products at temperatures less than 180 °C, the damascene process has been the prevailing patterning technology for Cu. Continuous device scaling introduces additional challenges to the currently used damascene process. For example, the “size effect” of Cu is a phenomenon in which the electrical resistivity of Cu increases rapidly as lateral dimensions are reduced below 100 nm. This limitation could be overcome in part by the use of copper films with larger grain size. Although this change could be implemented by annealing sputtered or evaporated Cu films, this approach to film pattering requires a plasma etch step which has not been feasible to date. In this presentation we discuss a simple, hydrogen (H2) plasma-based, low temperature etch process that was developed to allow an alternative method to Cu damascene technology. The effect of various gases and plasma conditions on the etch anisotropy were studied and the combined effects of ion bombardment, ultraviolet photon impingement, and H interaction with Cu surfaces appears to be responsible for the efficient removal of Cu in low temperature H2-based plasma environments.	en_US
dc.format.extent	38:46 minutes
dc.identifier.uri	http://hdl.handle.net/1853/37348
dc.language.iso	en_US	en_US
dc.publisher	Georgia Institute of Technology	en_US
dc.relation.ispartofseries	Nano@Tech Lecture Series
dc.subject	Fabrication	en_US
dc.subject	Interconnects	en_US
dc.subject	Nanostructures	en_US
dc.subject	Nanotechnology	en_US
dc.title	Subtractive Etching of Cu with Hydrogen-Based Plasmas	en_US
dc.type	Moving Image
dc.type	Text
dc.type.genre	Lecture
dc.type.genre	Presentation
dspace.entity.type	Publication
local.contributor.corporatename	Institute for Electronics and Nanotechnology (IEN)
local.relation.ispartofseries	Nano@Tech Lecture Series
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