Title:
Effective Interfaces in Silicon Heterojunction Solar Cells
Effective Interfaces in Silicon Heterojunction Solar Cells
Author(s)
Wang, T. H.
Page, M. R.
Yan, Y.
Branz, H. M.
Rohatgi, Ajeet
Wang, Q.
Yelundur, Vijay
Levi, D. H.
Iwaniczko, E.
Page, M. R.
Yan, Y.
Branz, H. M.
Rohatgi, Ajeet
Wang, Q.
Yelundur, Vijay
Levi, D. H.
Iwaniczko, E.
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Abstract
Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A
requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n)
emitters and screen-printed Al-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.
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Date Issued
2005-01
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Text
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Proceedings