Creative Epitaxy: Finding Ways to Violate Assumptions that Breach Material Barriers

Doolittle, William Alan

Title:

Creative Epitaxy: Finding Ways to Violate Assumptions that Breach Material Barriers

dc.contributor.author	Doolittle, William Alan
dc.contributor.corporatename	Georgia Institute of Technology. Institute for Electronics and Nanotechnology	en_US
dc.contributor.corporatename	Georgia Institute of Technology. School of Electrical and Computer Engineering	en_US
dc.date.accessioned	2022-01-25T04:36:45Z
dc.date.available	2022-01-25T04:36:45Z
dc.date.issued	2022-01-11
dc.description	Presented online January 11, 2022 from 12:00 p.m.-1:00 p.m., Georgia Tech, Atlanta, GA.	en_US
dc.description	Dr. W. Alan Doolittle is the Joseph M. Pettit professor in the School of Electrical and Computer Engineering at Georgia Institute of Technology. Doolittle is a proud, two-time Georgia Tech alumnus, earning his B.E.E. degree with highest honors in 1989 and his Ph.D. in Electrical Engineering in 1996. Doolittle leads the Advanced Semiconductor Technology Facility with an estimated equipment capitalization of $8 million and works in the areas of microelectronic fabrication, materials growth, materials and device characterization, neuromorphic computational devices, power devices, high frequency transistors and optoelectronic devices. Doolittle pioneered the area of hyper doping of wide bandgap semiconductors which has enabled the creation of new semiconductors including the widest bandgap semiconductor known, new devices that utilize quantum mechanical processes to reduce power losses and to allow new ways of interconnecting advanced power and optoelectronic devices. Doolittle has also pioneered the synthesis of lithium-metal-oxides which have recently gained attraction for very low power neuromorphic devices– devices that emulate human brain functionality.	en_US
dc.description	Runtime: 57:03 minutes	en_US
dc.description.abstract	Epitaxial processes are considered routine for applications spanning established industries from the silicon and GaN semiconductor industries to cutting edge research. As many as 10,000 epitaxial reactors crank out billions of dollars’ worth of light emitting diode chips for solid state white lighting alone. Those metrics increase 100-fold for silicon applications. Epitaxy is core to countless industries but is mostly performed in ways that have not changed for decades. But epitaxy can also be performed in non-standard ways to overcome “perceived” barriers to materials synthesis. Several examples will be given in this talk including: 1) Dynamic control of surface chemistry so as to enable higher solubility of desirable impurities; 2) Dynamic control of surface energy facilitating 3D control of alloy composition and material properties; 3) Electrothermal control of epitaxy to enable metastable phase materials; and 4) the “invention” of the widest semiconductor known. Each of these example problems has been solved by a common “thought process” wherein the fundamental assumption behind the limitation was defined and ways of violating the identified assumption was explored leading to new functionality in materials. The importance of the process – assumption identification and violation – will be discussed in hopes of conveying an important approach to solving hard problems. New emerging industries such as optoelectronics, neuromorphic computing and power electronics will be highlighted as beneficiaries of these unique approaches.	en_US
dc.format.extent	57:03 minutes
dc.identifier.uri	http://hdl.handle.net/1853/66205
dc.language.iso	en_US	en_US
dc.publisher	Georgia Institute of Technology	en_US
dc.relation.ispartofseries	Nano@Tech Lecture Series
dc.subject	Epitaxy	en_US
dc.subject	Creative thought	en_US
dc.subject	Inventive	en_US
dc.subject	Materials	en_US
dc.title	Creative Epitaxy: Finding Ways to Violate Assumptions that Breach Material Barriers	en_US
dc.type	Moving Image
dc.type.genre	Lecture
dspace.entity.type	Publication
local.contributor.author	Doolittle, William Alan
local.contributor.corporatename	Institute for Electronics and Nanotechnology (IEN)
local.relation.ispartofseries	Nano@Tech Lecture Series
relation.isAuthorOfPublication	a8907c5a-5af0-429f-895f-30c9de6f8c15
relation.isOrgUnitOfPublication	5d316582-08fe-42e1-82e3-9f3b79dd6dae
relation.isSeriesOfPublication	accfbba8-246e-4389-8087-f838de8956cf