Title:
Graphene Transistor
Graphene Transistor
| dc.contributor.patentcreator | De Heer, Walt A. | |
| dc.date.accessioned | 2017-05-12T14:26:43Z | |
| dc.date.available | 2017-05-12T14:26:43Z | |
| dc.date.filed | 9/26/2012 | |
| dc.date.issued | 10/27/2015 | |
| dc.description.abstract | A transistor includes a silicon carbide crystal (110) having a silicon terminated face (112). A semiconducting-type graphene layer (120) is bonded to the silicon terminated face (112). A first semimetallic-type graphene layer (122) is contiguous with a first portion of the semiconducting-type graphene layer (120). A second semimetallic-type graphene layer (122) is contiguous with a second portion of the semiconducting-type graphene layer (120) that is spaced apart from the first portion. An insulator layer (132) is disposed on a portion of the semiconducting-type graphene layer (120). A gate conductive layer (134) disposed on the insulator layer (132) and spaced apart from the semiconducting-type graphene layer (120). | |
| dc.description.assignee | Georgia Tech Research Corporation | |
| dc.identifier.cpc | H01L29/66431 | |
| dc.identifier.cpc | H01L29/7781 | |
| dc.identifier.cpc | H01L29/0657 | |
| dc.identifier.patentapplicationnumber | 14/345093 | |
| dc.identifier.patentnumber | 9171907 | |
| dc.identifier.uri | http://hdl.handle.net/1853/57027 | |
| dc.identifier.uspc | 1-Jan | |
| dc.title | Graphene Transistor | |
| dc.type | Text | |
| dc.type.genre | Patent | |
| dspace.entity.type | Publication | |
| local.contributor.corporatename | Georgia Institute of Technology | |
| local.relation.ispartofseries | Georgia Tech Patents | |
| relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
| relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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