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9171907.pdf (273.43 KB)

Author(s)

Authors

Advisor(s)

Advisor(s)

Editor(s)

Associated Organization(s)

Organizational Unit

Georgia Institute of Technology

Series

Series

Georgia Tech Patents

Collections

Research Publications

Supplementary to

Permanent Link

http://hdl.handle.net/1853/57027

Abstract

A transistor includes a silicon carbide crystal (110) having a silicon terminated face (112). A semiconducting-type graphene layer (120) is bonded to the silicon terminated face (112). A first semimetallic-type graphene layer (122) is contiguous with a first portion of the semiconducting-type graphene layer (120). A second semimetallic-type graphene layer (122) is contiguous with a second portion of the semiconducting-type graphene layer (120) that is spaced apart from the first portion. An insulator layer (132) is disposed on a portion of the semiconducting-type graphene layer (120). A gate conductive layer (134) disposed on the insulator layer (132) and spaced apart from the semiconducting-type graphene layer (120).

Sponsor

Date Issued

10/27/2015

Extent

Resource Type

Text

Resource Subtype

Patent

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