Title:
Boron Diffusion In Silicon Devices
Boron Diffusion In Silicon Devices
| dc.contributor.patentcreator | Rohatgi, Ajeet | |
| dc.contributor.patentcreator | Kim, Dong Seop | |
| dc.contributor.patentcreator | Nakayashiki, Kenta | |
| dc.contributor.patentcreator | Rounsaville, Brian | |
| dc.date.accessioned | 2017-05-12T14:28:50Z | |
| dc.date.available | 2017-05-12T14:28:50Z | |
| dc.date.filed | 12/13/2005 | |
| dc.date.issued | 9/7/2010 | |
| dc.description.abstract | Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer. | |
| dc.description.assignee | Georgia Tech Research Corporation | |
| dc.identifier.cpc | H01L31/1804 | |
| dc.identifier.cpc | H01L21/2255 | |
| dc.identifier.cpc | Y02E10/547 | |
| dc.identifier.patentapplicationnumber | 11/301527 | |
| dc.identifier.patentnumber | 7790574 | |
| dc.identifier.uri | http://hdl.handle.net/1853/57878 | |
| dc.identifier.uspc | 438/460 | |
| dc.title | Boron Diffusion In Silicon Devices | |
| dc.type | Text | |
| dc.type.genre | Patent | |
| dspace.entity.type | Publication | |
| local.contributor.corporatename | Georgia Institute of Technology | |
| local.relation.ispartofseries | Georgia Tech Patents | |
| relation.isOrgUnitOfPublication | cc30e153-7a64-4ae2-9b1d-5436686785e3 | |
| relation.isSeriesOfPublication | 0f49c79d-4efb-4bd9-b060-5c7f9191b9da |
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