Title:
Boron Diffusion In Silicon Devices

Thumbnail Image
Author(s)
Authors
Advisor(s)
Advisor(s)
Editor(s)
Associated Organization(s)
Organizational Unit
Series
Supplementary to
Abstract
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
Sponsor
Date Issued
9/7/2010
Extent
Resource Type
Text
Resource Subtype
Patent
Rights Statement
Rights URI