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Rohatgi, Ajeet

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Author: Ruby, D. S. × End date: 2001 × Start date: 2000 × search.filters.applied.f.isOrgUnitOfPublicationTitle: University Center of Excellence for Photovoltaics × Type: Text ×

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RIE-Texturing of Multicrystalline Silicon Solar Cells

2001-06 , Ruby, D. S. , Zaidi, S. H. , Narayanan, S. , Damiani, Benjamin Mark , Rohatgi, Ajeet

We developed a maskless plasma texturing technique for multicrystalline silicon (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. Internal quantum efficiencies as high as those on planar cells have been obtained, boosting cell currents and efficiencies by up to 7% on evaporated metal and 4% on screen-printed cells.

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Rapid Thermal Technologies for High Efficiency Silicon Solar Cells

2001-06 , Ebong, Abasifreke , Cho, Y. H. , Hilali, Mohamed M. , Rohatgi, Ajeet , Ruby, D. S.

This paper shows that rapidly formed emitters (≤ 6 min) in a conveyor belt furnace or 3 minutes in an RTP system, in conjunction with a screen-printed (SP) RTP Al-BSF and passivating oxide formed simultaneously in 2 minutes can produce high efficiency cells with no surface texturing, point contacts, or selective emitter. It is shown for the first time that an 80 Ω/ emitter and SP Al-BSF formed in a high throughput belt furnace can produce 19% FZ cells, 18.4% MCZ cells and greater than 17% CZ cells with photolithography (PL) contacts. Using PL contacts, we also achieved 19% efficient cells on FZ, >18% on MCZ, and ~17% boron-doped CZ by emitter and SP Al-BSF formation in less than 10 minutes in a single wafer RTP system. Finally, a manufacturable process with 45 Ω/ emitter and screen-printed (SP) Al-BSF and Ag contacts formed in the conveyor belt furnace gave 17% efficient cells on FZ silicon. Compared to the photolithography cells, the SP cell gave ∼2% lower efficiency along with a decrease in Jsc and fill factor (FF). This loss in performance is attributed to a combination of the poor blue response, higher series resistance and higher contact shading in the SP devices.

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Development of RIE-Textured Silicon Solar Cells

2000-09 , Damiani, Benjamin Mark , Ludemann, R. , Ruby, D. S. , Zaidi, S. H. , Rohatgi, Ajeet

A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before and 3.9 % after SiN deposition. A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma damage removal treatments are tested to optimize low lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased & due to the RIE texture proved superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique, especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SFS makes this process attractive for mass production.

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