Person:
Rohatgi,
Ajeet
Publication Search Results
RIE-Texturing of Multicrystalline Silicon Solar Cells
Development of RIE-Textured Silicon Solar Cells
Person:
Rohatgi,
Ajeet
1 - 2 of 2
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We developed a maskless plasma texturing technique for multicrystalline silicon (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to
extremely low levels. Internal quantum efficiencies as high as those on planar cells have been obtained, boosting cell
currents and efficiencies by up to 7% on evaporated metal and 4% on screen-printed cells.
Item
A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before and 3.9 % after SiN deposition.
A detailed study of surface recombination and emitter properties was made, then solar cells were fabricated using the DOSS solar cell process. Different plasma damage
removal treatments are tested to optimize low
lifetime solar cell efficiencies. Highest efficiencies are observed for little or no plasma-damage removal etching on mc-Si. Increased & due to the RIE texture proved
superior to a single layer anti-reflection coating. This indicates that RIE texturing is a promising texturing technique,
especially applicable on lower lifetime (multicrystalline) silicon. The use of non-toxic, non-corrosive SFS makes this
process attractive for mass production.