Person:
Doolittle,
William Alan
Doolittle,
William Alan
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ItemMultiferroic materials for microwave parametric power amplifiers(Georgia Institute of Technology, 2011-05-15) Kenney, J. Stevenson ; Doolittle, William Alan ; Papapolymerou, Ioannis John
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ItemARO DURIP report - custom scanning tunneling microscope(Georgia Institute of Technology, 2011-01-18) Doolittle, William Alan
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ItemCAREER: New device opportunities enabled by polar dielectric and semiconductor heteroepitaxy(Georgia Institute of Technology, 2009-03-31) Doolittle, William Alan ; Lee, Kyoung-Keun Lee
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ItemHeat dissipation in high-power GaN electronics on thermally resistive substrates(Georgia Institute of Technology, 2005-08) Christensen, Adam ; Doolittle, William Alan ; Graham, SamuelThe heat dissipation in GaN devices grown on low thermal conductivity lithium gallate (LGO) substrates was investigated. The thermal conductivity of single-crystal LGO was measured utilizing the 3ω technique for temperatures ranging from 100 K–500 K. For the GaN layer, the thermal conductivity was estimated using a phonon transport model which included dislocation density and temperature dependence. These data were then used in a finite element program to determine the thermal behavior of a heterojunction field-effect transistor. Based on a maximum junction temperature of 500 K, it was found that devices with a power dissipation of 1W/mm were possible if the primary heat dissipation path was through the low thermal conductivity substrate. However, in using a front side cooling scheme, results suggest that it may be possible to develop devices with power dissipation in the range of 10 W/mm.
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ItemLeaky surface acoustic waves in Z-LiNbO ₃ substrates with epitaxial AlN overlays(Georgia Institute of Technology, 2004-10) Bu, G. ; Ciplys, D. ; Shur, M. S. ; Namkoong, G. ; Doolittle, William Alan ; Hunt, William D.The properties of leaky surface acoustic waves (LSAW) in MBE grown AIN layer on Z-cut LiNbO₃ structures have been studied by numerical simulation and experimental measurements and compared with those of Rayleigh waves in the same structure. In the range of AIN layer thicknesses studied (0
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ItemNovel High Efficiency Photovoltaic Devices Based on the III-N Material System(Georgia Institute of Technology, 2004-06-08) Doolittle, William Alan
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ItemApplied EPI RF matching network final report(Georgia Institute of Technology, 2004-03-31) Doolittle, William Alan
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ItemFundamental understanding, characterization, passivation and gettering of electrically active defects in silicon(Georgia Institute of Technology, 1996-05) Doolittle, William Alan