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de Heer, Walter A.

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    Early Development of Graphene Electronics
    (Georgia Institute of Technology, 2009) de Heer, Walter A.
    Graphene has recently emerged as a material likely to complement or eventually succeed silicon in electronics. From 2001 to 2004, groundbreaking research was pursued behind the scenes at Georgia Tech; various directions were explored, including exfoliation techniques and CVD growth, but epitaxial graphene on silicon carbide emerged as the most viable route. This document provides archival information that may otherwise be difficult to obtain, including two proposals on file with the NSF, submitted in 2001 and 2003, and the first graphene patent, filed in 2003. The 2001 document proposes much of the graphene research carried out during this decade, and the 2003 proposal includes the data that was eventually published in J. Phys. Chem. B in Dec. 2004.
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    In situ imaging of field emission from individual carbon nanotubes and their structural damage
    (Georgia Institute of Technology, 2002-02-04) Wang, Z. L. (Zhong Lin) ; Gao, Rui Ping ; de Heer, Walter A. ; Poncharal, P.
    Field emission of individual carbon nanotubes was observed by in situ transmission electron microscopy. A fluctuation in emission current was due to a variation in distance between the nanotube tip and the counter electrode owing to a "head-shaking" effect of the nanotube during field emission. Strong field-induced structural damage of a nanotube occurs in two ways: a piece-by-piece and segment-by-segment pilling process of the graphitic layers, and a concentrical layer-by-layer stripping process. The former is believed owing to a strong electrostatic force, and the latter is likely due to heating produced by emission current that flowed through the most outer graphitic layers.
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    Patterned Graphene Nanoelectronics
    (Georgia Institute of Technology, 2001-12-19) de Heer, Walter A.
    This work documents the birth of graphene electronics. Its purpose is to provide a contemporaneous historical account of the existent knowledge of graphene in 2001, the fundamental concepts of graphene nano electronics, and the status quo of experiments at that time. It describes the exfoliated graphene field effect transistor, patterned epitaxial graphene on silicon carbide, chemical vapor deposited graphene as well as potential uses of boron nitride.
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    A New Approach Towards Property Nanomeasurements Using In Situ TEM
    (Georgia Institute of Technology, 2001) Wang, Z. L. (Zhong Lin) ; Poncharal, P. ; de Heer, Walter A. ; Gao, Rui Ping
    Property characterization of nanomaterials is challenged by the small size of the structure because of the difficulties in manipulation. Here we demonstrate a novel approach that allows a direct measurement of the mechanical and electrical properties of individual nanotube-like structures by in-situ transmission electron microscopy (TEM). The technique is powerful in a way that it can directly correlate the atomic-scale microstructure of the carbon nanotube with its physical properties, providing a one-to-one correspondence in structure-property characterization. Applications of the technique will be demonstrated on mechanical properties, the electron field emission and the ballistic quantum conductance in individual nanotubes. A nanobalance technique is demonstrated that can be applied to measure the mass of a single tiny particle as light as 22 fg (1 f= 10-').