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Naeemi, Azad

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Polylithic integration of electrical and optical interconnect technologies for gigascale fiber-to-the-chip communication

2005-08 , Mule’, Anthony V. , Villalaz, Ricardo A. , Joseph, Paul Jayachandran , Naeemi, Azad , Kohl, Paul A. , Gaylord, Thomas K. , Meindl, James D.

Polylithic integration of electrical and optical interconnect technologies is presented as a solution for merging silicon CMOS and compound semiconductor optoelectronics. In contrast to monolithic and hybrid integration technologies, polylithic integration allows for the elimination of optoelectronic and integrated optic device-related processing from silicon CMOS manufacturing. Printed wiring board-level and compound semiconductor chip-level waveguides terminated with volume grating couplers facilitate bidirectional optical communication, where fiber-to-board and board-to-chip optical coupling occurs through a two-grating (or grating-to-grating) coupling path. A 27% increase in the electrical signal I/O projected by and 33% increase in the number of substrate-level electrical signal interconnect layers implied by the International Technology Roadmap for Semiconductors (ITRS) projections for the 32-nm technology generation are required to facilitate 10 Tb/s aggregate bidirectional fiber-to-the-chip communication. Buried air-gap channels provide for the routing of chip or board-level encapsulated air-clad waveguides for minimum crosstalk and maximum interconnect density. Optical signals routed on-board communicate with on-chip volume grating couplers embedded as part of a wafer-level batch package technology exhibiting compatible electrical and optical input/output interconnects. Measurements of grating-to-grating coupling reveal 31% coupling efficiency between two slab, nonoptimized, nonfocusing volume grating couplers.

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Optical and electrical interconnect partition length based on chip-to-chip bandwidth maximization

2004-04 , Naeemi, Azad , Xu, Jianping , Mule’, Anthony V. , Gaylord, Thomas K. , Meindl, James D.

The lengths beyond which board-level optical waveguides are capable of transferring a larger number of bits per second than electrical interconnects are found for various technology generations. As technology scales from the 130-nm technology node to the 45-nm technology node, the partition length falls from 29 to 8.3 cm due to seven times larger driver-switching frequency and 40% finer waveguide pitches.

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