Title:
Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates
Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates
Files
Author(s)
Dindar, Amir
Kim, Jungbae
Fuentes-Hernandez, Canek
Kippelen, Bernard
Kim, Jungbae
Fuentes-Hernandez, Canek
Kippelen, Bernard
Advisor(s)
Editor(s)
Collections
Supplementary to
Permanent Link
Abstract
We report on the fabrication of p-channel thin film transistors (TFTs) and vertically stacked complementary inverters comprised of a p-channel copper oxide TFT on top of an n-channel indium gallium zinc oxide TFT fabricated on a flexible polyethersulfone substrate. The p- and n-channel TFTs showed saturation mobility values of 0.0022 and 1.58 cm²/Vs, respectively, yielding inverters with a gain of 120 V/V. This level of performance was achieved by reducing the copper oxide channel thickness, allowing oxygen diffusion into the copper oxide layer at medium processing temperature (150 °C).
Sponsor
Date Issued
2011-10
Extent
Resource Type
Text
Resource Subtype
Article