Stress relaxation in GaN by transfer bonding on Si substrates

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Author(s)
Hsu, S. C.
Pong, B. J.
Li, W. H.
Beechem, Thomas
Liu, C. Y.
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http://hdl.handle.net/1853/45605
Abstract
The stress state of GaN epilayers transferred onto Si substrates through a Au–Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 µm, the high compressive stress state in GaN layer was relieved. A 10 µm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ∼ 85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.
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2007-12-17
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