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8558329.pdf (446.79 KB)

Author(s)

Authors

Advisor(s)

Advisor(s)

Editor(s)

Associated Organization(s)

Organizational Unit

Georgia Institute of Technology

Series

Series

Georgia Tech Patents

Collections

Research Publications

Supplementary to

Permanent Link

http://hdl.handle.net/1853/56815

Abstract

A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.

Sponsor

Date Issued

10/15/2013

Extent

Resource Type

Text

Resource Subtype

Patent

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