Manganese-doped ZnO nanobelts for spintronics

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Ronning, C.
Gao, Puxian
Ding, Yong
Wang, Z. L. (Zhong Lin)
Schwen, D.
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http://hdl.handle.net/1853/27178
Abstract
Zinc oxide (ZnO) nanobelts synthesized by thermal evaporation have been ion implanted with 30 keV Mn+ ions. Both transmission electron microscopy and photoluminescence investigations show highly defective material directly after the implantation process. Upon annealing to 800 °C, the implanted Mn remains in the ZnO nanobelts and the matrix recovers both in structure and luminescence. The produced high-quality ZnO:Mn nanobelts are potentially useful for spintronics.
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2004-02-02
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