Title:
Development of Porous Silicon Microfilters

dc.contributor.author Campbell, Jenna
dc.contributor.department Physics
dc.date.accessioned 2009-06-08T18:56:29Z
dc.date.available 2009-06-08T18:56:29Z
dc.date.issued 2009-05-04
dc.description.abstract This study develops a one-step anodization separation process (OSS) after examining two step and multi step liftoff procedures in which porous silicon (PS) films lift off from their substrates. This lift-off process provides a means to produce silicon filters, a worthy alternative to alumina filters that cannot withstand high temperatures as well as silicon and whose pore diameter has yet to reach into the order of microns. By electrochemical etching of p-type silicon wafers in a hydrofluoric acid-based solution, microporous filters with pore diameters varying from 1 to 2 microns whose depths range from 3 to 70 micrometers are fabricated. Using wafers with a resistivity of 14-22 Ω-cm, mobile filters with consistent structural qualities can be reproduced. en
dc.description.advisor James Gole - Faculty Mentor ; Edward Conrad - Committee Member/Second Reader
dc.identifier.uri http://hdl.handle.net/1853/28119
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.subject Porous silicon en
dc.subject Micro/nano films en
dc.subject Active en
dc.subject Lift-off en
dc.subject Filter en
dc.title Development of Porous Silicon Microfilters en
dc.type Text
dc.type.genre Undergraduate Thesis
dspace.entity.type Publication
local.contributor.corporatename College of Sciences
local.contributor.corporatename School of Physics
local.contributor.corporatename Undergraduate Research Opportunities Program
local.relation.ispartofseries Undergraduate Research Option Theses
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relation.isOrgUnitOfPublication 2ba39017-11f1-40f4-9bc5-66f17b8f1539
relation.isOrgUnitOfPublication 0db885f5-939b-4de1-807b-f2ec73714200
relation.isSeriesOfPublication e1a827bd-cf25-4b83-ba24-70848b7036ac
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