Title:
Tailoring the work function of indium tin oxide electrodes in electrophosphorescent organic light-emitting diodes

dc.contributor.author Sharma, Asha en_US
dc.contributor.author Hotchkiss, Peter J. en_US
dc.contributor.author Marder, Seth R. en_US
dc.contributor.author Kippelen, Bernard en_US
dc.contributor.corporatename Georgia Institute of Technology. Center for Organic Photonics and Electronics en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Electrical and Computer Engineering en_US
dc.contributor.corporatename Georgia Institute of Technology. School of Chemistry and Biochemistry en_US
dc.date.accessioned 2013-04-30T20:28:38Z
dc.date.available 2013-04-30T20:28:38Z
dc.date.issued 2009
dc.description © 2009 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3095492 en_US
dc.description DOI: 10.1063/1.3095492 en_US
dc.description.abstract We investigate the use of organic surface modifiers based on phosphonic acid anchoring groups that react with the surface of indium tin oxide (ITO) in order to modify its work function, surface energy, and the charge injection in organic multilayer electrophosphorescent devices. The phosphonic acid surface modifiers, possessing different substituting groups, are found to tune the work function of ITO in the range of 4.40–5.40 eV. These surface modifiers have been tested as an interfacial layer between the ITO anode and hole transport layers HTL that are either processed from the vapor phase or from solution. The use of this interfacial layer with a solution-processible HTL results in high quantum and luminous efficiencies of 20.6% and 68 cd/A at 100 cd/m² (17.5% and 60 cd/A at 1000 cd/m²). The enhanced performance of the devices incorporating phosphonic acid modifiers could be associated with an improved charge injection and a better compatibility with the hydrophobic nature of the organic layer. The performance of these devices is also compared to that of devices in which ITO is modified with other well-known techniques such as air plasma treatment or the use of a layer of poly (3,4-ethylenedioxythiophene)/poly (styrenesulfonate). en_US
dc.identifier.citation Sharma, Asha and Hotchkiss, Peter J. and Marder, Seth and Kippelen, Bernard, "Tailoring the work function of indium tin oxide electrodes in electrophosphorescent organic light-emitting diodes," Journal of Applied Physics, 105, 8, 084507 (2009) en_US
dc.identifier.doi 10.1063/1.3095492
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/1853/46870
dc.publisher Georgia Institute of Technology en_US
dc.publisher.original American Institute of Physics en_US
dc.subject Electrochemical electrodes en_US
dc.subject Electrophoresis en_US
dc.subject Indium compounds en_US
dc.subject Organic light emitting diodes en_US
dc.subject Surface energy en_US
dc.subject Work function en_US
dc.title Tailoring the work function of indium tin oxide electrodes in electrophosphorescent organic light-emitting diodes en_US
dc.type Text
dc.type.genre Article
dspace.entity.type Publication
local.contributor.author Kippelen, Bernard
local.contributor.author Marder, Seth R.
local.contributor.corporatename Center for Organic Photonics and Electronics
relation.isAuthorOfPublication 89dff3fa-f69f-48dc-a1b2-89e73be81537
relation.isAuthorOfPublication d1ec1d90-12ad-40fb-8f0b-b1a751e796fe
relation.isOrgUnitOfPublication 43f8dc5f-0678-4f07-b44a-edbf587c338f
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
COPE_099.pdf
Size:
421.56 KB
Format:
Adobe Portable Document Format
Description: