Title:
Thermal metrology of silicon microstructures using Raman spectroscopy
Thermal metrology of silicon microstructures using Raman spectroscopy
| dc.contributor.author | Abel, Mark R. | en_US |
| dc.contributor.author | Wright, Tanya L. | en_US |
| dc.contributor.author | King, William P. | en_US |
| dc.contributor.author | Graham, Samuel | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.date.accessioned | 2013-06-27T19:45:02Z | |
| dc.date.available | 2013-06-27T19:45:02Z | |
| dc.date.issued | 2007-06 | |
| dc.description | © 2007 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en_US |
| dc.description.abstract | Thermal metrology of an electrically active silicon heated atomic force microscope cantilever and doped polysilicon microbeams was performed using Raman spectroscopy. The temperature dependence of the Stokes Raman peak location and the Stokes to anti-Stokes intensity ratio calibrated the measurements, and it was possible to assess both temperature and thermal stress behavior with resolution near 1µm. The devices can exceed 400 C with the required power depending upon thermal boundary conditions. Comparing the Stokes shift method to the intensity ratio technique, non-negligible errors in devices with mechanically fixed boundary conditions compared to freely standing structures arise due to thermally induced stress. Experimental values were compared with a finite element model, and were within 9% of the thermal response and 5% of the electrical response across the entire range measured. | en_US |
| dc.identifier.citation | Abel, Mark R.; Wright, Tanya L.; King, William P. and Graham, Samuel, "Thermal metrology of silicon microstructures using Raman spectroscopy," IEEE Transactions on Components and Packaging Technologies, Vol. 30, no.2, pp.200-208 (June 2007). | en_US |
| dc.identifier.doi | 10.1109/TCAPT.2007.897993 | en_US |
| dc.identifier.issn | 1521-3331 (print) | |
| dc.identifier.uri | http://hdl.handle.net/1853/48106 | |
| dc.language.iso | en_US | en_US |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | Institute of Electrical and Electronics Engineers | en_US |
| dc.subject | Heated atomic force microscope (AFM) cantilever | en_US |
| dc.subject | Microscale thermometry | en_US |
| dc.subject | Raman spectroscopy | en_US |
| dc.subject | Thermal microelectromechanical systems (MEMS) | en_US |
| dc.title | Thermal metrology of silicon microstructures using Raman spectroscopy | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Graham, Samuel | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | cf62405d-2133-40a8-b046-bce4a3443381 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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