Title:
Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability
Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability
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Author(s)
Kim, Jungbae
Fuentes-Hernandez, Canek
Hwang, D. K.
Potscavage, William J., Jr.
Kippelen, Bernard
Fuentes-Hernandez, Canek
Hwang, D. K.
Potscavage, William J., Jr.
Kippelen, Bernard
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Abstract
We report on the operational stability of low-voltage hybrid organic-inorganic complementary
inverters with a top-gate bottom source-drain geometry. The inverters
are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film
transistors (TFTs) with bi-layer gate dielectrics formed from an amorphous layer of
a fluoropolymer (CYTOP) and a high-k layer of Al₂O₃. The p- and n- channel TFTs
show saturationmobility values of 0.1±0.01 and 5.0±0.5 cm²/Vs, respectively. The
individual transistors show high electrical stability with less than 6% drain-to-source
current variations after 1 h direct current (DC) bias stress. Complementary inverters
yield hysteresis-free voltage transfer characteristics for forward and reverse input
biases with static DC gain values larger than 45 V/V at 8 V before and after being
subjected to different conditions of electrical stress. Small and reversible variations of
the switching threshold voltage of the inverters during these stress tests are compatible
with the observed stability of the individual TFTs.
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Date Issued
2012-03
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