Title:
Method And Apparatus For Low Energy Electron Enhanced Etching And Cleaning Of Substrates In The Positive Column Of A Plasma

dc.contributor.patentcreator Martin, Kevin P.
dc.contributor.patentcreator Gillis, Harry P.
dc.contributor.patentcreator Choutov, Dmitri A.
dc.date.accessioned 2017-05-12T14:27:31Z
dc.date.available 2017-05-12T14:27:31Z
dc.date.filed 12/3/1997
dc.date.issued 3/7/2000
dc.description.abstract A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical support located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc B08B7/0035
dc.identifier.cpc H01J37/3233
dc.identifier.cpc H01J37/32623
dc.identifier.patentapplicationnumber 08/984225
dc.identifier.patentnumber 6033587
dc.identifier.uri http://hdl.handle.net/1853/57331
dc.identifier.uspc 216/71
dc.title Method And Apparatus For Low Energy Electron Enhanced Etching And Cleaning Of Substrates In The Positive Column Of A Plasma
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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