Title:
Low-Frequency Noise in SiGe HBTs and Lateral BJTs

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dc.contributor.advisor Cressler, John D.
dc.contributor.author Zhao, Enhai en_US
dc.contributor.committeeMember First, Phillip
dc.contributor.committeeMember Hunt, William
dc.contributor.committeeMember Laskar, Joy
dc.contributor.committeeMember Papapolymerou, Ioannis
dc.contributor.department Electrical and Computer Engineering en_US
dc.date.accessioned 2007-03-27T18:23:08Z
dc.date.available 2007-03-27T18:23:08Z
dc.date.issued 2006-08-17 en_US
dc.description.abstract The object of this thesis is to explore the low-frequency noise (LFN) in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and lateral bipolar junction transistors (BJTs). The LFN of SiGe HBTs and lateral BJTs not only determines the lowest detectable signal limit but also induces phase noise in high-frequency applications. Characterizing the LFN behavior and understanding the physical noise mechanism, therefore, are very important to improve the device and circuit performance. The dissertation achieves the object by investigating the LFN of SiGe HBTs and lateral BJTs with different structures for performance optimization and radiation tolerance, as well as by building models that explain the physical mechanism of LFN in these advance bipolar technologies. The scope of this research is separated into two main parts: the LFN of SiGe HBTs; and the LFN of lateral BJTs. The research in the LFN of SiGe HBTs includes investigating the effects of interfacial oxide (IFO), temperature, geometrical dimensions, and proton radiation. It also includes utilizing physical models to probe noise mechanisms. The research in the LFN of lateral BJTs includes exploring the effects of doping and geometrical dimensions. The research work is envisioned to enhance the understanding of LFN in SiGe HBTs and lateral BJTs. en_US
dc.description.degree Ph.D. en_US
dc.format.extent 3293750 bytes
dc.format.mimetype application/pdf
dc.identifier.uri http://hdl.handle.net/1853/14098
dc.language.iso en_US
dc.publisher Georgia Institute of Technology en_US
dc.subject Interfacial oxide en_US
dc.subject Lateral BJT en_US
dc.subject SiGe HBTs en_US
dc.subject Low-frequency noise en_US
dc.subject.lcsh Bipolar transistors Design en_US
dc.title Low-Frequency Noise in SiGe HBTs and Lateral BJTs en_US
dc.type Text
dc.type.genre Dissertation
dspace.entity.type Publication
local.contributor.advisor Cressler, John D.
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
relation.isAdvisorOfPublication 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc
relation.isOrgUnitOfPublication 5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
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