Title:
Doping and planar defects in the formation of single-crystal ZnO nanorings
Doping and planar defects in the formation of single-crystal ZnO nanorings
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Author(s)
Ding, Yong
Kong, Xiang Yang
Wang, Z. L. (Zhong Lin)
Kong, Xiang Yang
Wang, Z. L. (Zhong Lin)
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Abstract
We have recently reported the growth of freestanding, single-crystal, seamless nanorings of zinc oxide via a
spontaneous self-coiling process during the growth of polar-nanobelts [X.Y. Kong et al., Science 303, 1348
(2004)]. The nanoring is made by coaxial and uniradius loop-by-loop winding of a fine ZnO nanobelt. An
important fact is that each and every nanoring is made of a nanobelt that contains basal-plane planar defects,
which are suggested to be important for leading the fastest growth of the nanobelt as well as lowering its elastic
deformation energy. In this paper, high-resolution transmission electron microscopy is applied to investigate
the nature of the planar defects in the nanobelts and in nanorings. The planar defects were initiated and formed
by single-layer segregation of the doping element, such as indium, which was introduced in the growth
process. The accumulation of impurity ions forms two vicinal InuO octahedral layers parallel to the basal
plane. They form “head-to-head” and “tail-to-tail” polar-inversion domain boundaries. For a nanobelt that
self-coils into a nanoring, we found that the head-to-head and tail-to-tail polar-inversion domain boundaries are
paired, thus, the polarity of the nanobelt is unchanged. Therefore, our data support the proposed model [X.Y.
Kong et al., Science 303, 1348 (2004)] that the nanoring is initiated by circularly folding a nanobelt due to
long-range electrostatic interaction between the surface polar charges on the two sides, and a loop-by-loop
winding of the nanobelt forms a complete ring.
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Date Issued
2004-12-06
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