Title:
Comparison of Front and Back Surface Passivation Schemes for Silicon Solar Cells

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dc.contributor.author Moschner, J. D.
dc.contributor.author Doshi, P.
dc.contributor.author Ruby, D. S.
dc.contributor.author Lauinger, T.
dc.contributor.author Aberle, A. G.
dc.contributor.author Rohatgi, Ajeet
dc.contributor.corporatename Institut für Solarenergieforschung Hameln
dc.contributor.corporatename Sandia National Laboratories
dc.contributor.corporatename Angewandte Solarenergie GmbH
dc.contributor.corporatename Georgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education
dc.date.accessioned 2008-12-17T20:30:55Z
dc.date.available 2008-12-17T20:30:55Z
dc.date.issued 1998-07
dc.description Presented at the 2nd World Conference on Photovoltaic Solar Energy Conversion; Vienna, Austria; July 6-10, 1998. en
dc.description.abstract This work presents a comprehensive study on fast, low-cost methods for the electronic passivation of the phosphorus-diffused front surface and the non-diffused p-type rear surface of crystalline Si solar cells. Titanium dioxide is compared with rapidly-grown thermal oxide (RTO) and PECVD silicon nitrides from three different laboratories. Double layers of RTO and Ti02 or SiN are also investigated. We demonstrate that SiN and RTO single layers can provide very good passivation on both the front and back surface of solar cells. It is also shown that double layers consisting of a thin RTO film and silicon nitride can improve the passivation quality of most SiN layers, and enhance the stability under thermal treatment. With the proper choice of RTO, SiN, and thermal treatment, excellent surface recombination velocities on the back as well as very low emitter saturation currents can he reached using these fast, industrially feasible methods. All films used also provide or are compatible with a good antireflection coating of the cell surface. en
dc.identifier.uri http://hdl.handle.net/1853/26202
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.subject Solar cells en
dc.subject Silicon solar cells en
dc.subject Passivation en
dc.subject Silicon nitride en
dc.title Comparison of Front and Back Surface Passivation Schemes for Silicon Solar Cells en
dc.type Text
dc.type.genre Proceedings
dspace.entity.type Publication
local.contributor.author Rohatgi, Ajeet
local.contributor.corporatename School of Electrical and Computer Engineering
local.contributor.corporatename College of Engineering
local.contributor.corporatename University Center of Excellence for Photovoltaics
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relation.isOrgUnitOfPublication 7c022d60-21d5-497c-b552-95e489a06569
relation.isOrgUnitOfPublication 93ace8d3-7479-459e-b63d-27aff6118464
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