Title:
Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer
Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer
| dc.contributor.author | Kim, Felix Sunjoo | en_US |
| dc.contributor.author | Hwang, Do-Kyung | en_US |
| dc.contributor.author | Kippelen, Bernard | en_US |
| dc.contributor.author | Jenekhe, Samson A. | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
| dc.contributor.corporatename | University of Washington. Dept. of Chemical Engineering | en_US |
| dc.contributor.corporatename | University of Washington. Dept. of Chemistry | en_US |
| dc.contributor.corporatename | Georgia Institute of Technology. School of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2013-05-29T18:28:38Z | |
| dc.date.available | 2013-05-29T18:28:38Z | |
| dc.date.issued | 2011-10 | |
| dc.description | © 2011 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3655680 | en_US |
| dc.description | DOI: 10.1063/1.3655680 | en_US |
| dc.description.abstract | Insertion of a low-k polymer dielectric layer between the SiO₂ gate dielectric and poly(benzobisimidazobenzophenanthroline) (BBL) semiconductor of n-channel transistors is found to increase the field-effect mobility of electrons from 3.6 × 10⁻⁴ cm²/Vs to as high as 0.028 cm²/Vs. The enhanced carrier mobility was accompanied by improved multicycling stability and durability in ambient air. Studies of a series of eight polymer dielectrics showed that the electron mobility increased exponentially with decreasing dielectric constant, which can be explained to result from the reduced energetic expense of charge-carrier/dipole interaction. | en_US |
| dc.identifier.citation | Kim, Felix Sunjoo and Hwang, Do-Kyung and Kippelen, Bernard and Jenekhe, Samson A., "Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer," Applied Physics Letters, 99, 17 (October 24 2011) | en_US |
| dc.identifier.doi | 10.1063/1.3655680 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/1853/47109 | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.publisher.original | American Institute of Physics | en_US |
| dc.subject | Carrier mobility | en_US |
| dc.subject | Low-k dielectric thin films | en_US |
| dc.subject | Organic field effect transistors | en_US |
| dc.subject | Organic semiconductors | en_US |
| dc.subject | Polymer films | en_US |
| dc.subject | Silicon compounds | en_US |
| dc.subject | Thin film transistors | en_US |
| dc.title | Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer | en_US |
| dc.type | Text | |
| dc.type.genre | Article | |
| dspace.entity.type | Publication | |
| local.contributor.author | Kippelen, Bernard | |
| local.contributor.corporatename | Center for Organic Photonics and Electronics | |
| relation.isAuthorOfPublication | 89dff3fa-f69f-48dc-a1b2-89e73be81537 | |
| relation.isOrgUnitOfPublication | 43f8dc5f-0678-4f07-b44a-edbf587c338f |
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