Title:
Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology
Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology
| dc.contributor.advisor | Cressler, John D. | |
| dc.contributor.author | Ahmed, Adnan | en_US |
| dc.contributor.committeeMember | Papapolymerou, John | |
| dc.contributor.committeeMember | Laskar, Joy | |
| dc.contributor.department | Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2005-09-16T15:15:45Z | |
| dc.date.available | 2005-09-16T15:15:45Z | |
| dc.date.issued | 2005-07-19 | en_US |
| dc.description.abstract | This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge. | en_US |
| dc.description.degree | M.S. | en_US |
| dc.format.extent | 54352952 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1853/7227 | |
| dc.language.iso | en_US | |
| dc.publisher | Georgia Institute of Technology | en_US |
| dc.subject | Heterojunction | en_US |
| dc.subject | HBT | |
| dc.subject | Low-temperature | |
| dc.subject | DC characteristics | |
| dc.subject | SiGe | |
| dc.subject | Silicon-germanium | |
| dc.subject | Technology generation | |
| dc.subject | Static characteristics | |
| dc.subject | Cryogenic | |
| dc.subject | Scaling | |
| dc.subject.lcsh | Silicon alloys Effect of temperature on | en_US |
| dc.subject.lcsh | Metal oxide semiconductors, Complementary Effect of temperature on | en_US |
| dc.subject.lcsh | Low temperature engineering | en_US |
| dc.subject.lcsh | Junction transistors Effect of temperature on | en_US |
| dc.subject.lcsh | Heterojunctions Effect of temperature on | en_US |
| dc.subject.lcsh | Germanium Effect of temperature on | en_US |
| dc.subject.lcsh | Bipolar transistors Effect of temperature on | en_US |
| dc.title | Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology | en_US |
| dc.type | Text | |
| dc.type.genre | Thesis | |
| dspace.entity.type | Publication | |
| local.contributor.advisor | Cressler, John D. | |
| local.contributor.corporatename | School of Electrical and Computer Engineering | |
| local.contributor.corporatename | College of Engineering | |
| relation.isAdvisorOfPublication | 2df1dcb5-f1ce-4e65-a1eb-021f8a8ab8bc | |
| relation.isOrgUnitOfPublication | 5b7adef2-447c-4270-b9fc-846bd76f80f2 | |
| relation.isOrgUnitOfPublication | 7c022d60-21d5-497c-b552-95e489a06569 |
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