Interposer platforms featuring polymer-enhanced through silicon vias for microelectronic systems

Thadesar, Paragkumar A.

Title:

Interposer platforms featuring polymer-enhanced through silicon vias for microelectronic systems

dc.contributor.advisor	Bakir, Muhannad S.
dc.contributor.author	Thadesar, Paragkumar A.
dc.contributor.committeeMember	Brand, Oliver
dc.contributor.committeeMember	Cressler, John
dc.contributor.committeeMember	Wang, Hua
dc.contributor.committeeMember	Sitaraman, Suresh
dc.contributor.department	Electrical and Computer Engineering
dc.date.accessioned	2015-06-08T18:35:58Z
dc.date.available	2015-06-08T18:35:58Z
dc.date.created	2015-05
dc.date.issued	2015-04-07
dc.date.submitted	May 2015
dc.date.updated	2015-06-08T18:35:58Z
dc.description.abstract	Novel polymer-enhanced photodefined through-silicon via (TSV) and passive technologies have been demonstrated for silicon interposers to obtain compact heterogeneous computing and mixed-signal systems. These technologies include: (1) Polymer-clad TSVs with thick (~20 µm) liners to help reduce TSV losses and stress, and obtain optical TSVs in parallel for interposer-to-interposer long-distance communication; (2) Polymer-embedded vias with copper vias embedded in polymer wells to significantly reduce the TSV losses; (3) Coaxial vias in polymer wells to reduce the TSV losses with controlled impedance; (4) Antennas over polymer wells to attain a high radiation efficiency; and (5) High-Q inductors over polymer wells. Cleanroom fabrication and characterization of the technologies have been demonstrated. For the fabricated polymer-clad TSVs, resistance and synchrotron x-ray diffraction (XRD) measurements have been demonstrated. High-frequency measurements up to 170 GHz and time-domain measurements up to 10 Gbps have been demonstrated for the fabricated polymer-embedded vias. For the fabricated coaxial vias and inductors, high-frequency measurements up to 50 GHz have been demonstrated. Lastly, for the fabricated antennas, measurements in the W-band have been demonstrated.
dc.description.degree	Ph.D.
dc.format.mimetype	application/pdf
dc.identifier.uri	http://hdl.handle.net/1853/53572
dc.language.iso	en_US
dc.publisher	Georgia Institute of Technology
dc.subject	Silicon interposer
dc.subject	D-band
dc.subject	W-band
dc.subject	RF
dc.subject	Through-silicon via (TSV)
dc.subject	Packaging
dc.subject	Interconnects
dc.subject	Optical interconnects
dc.subject	Antenna
dc.subject	Inductor
dc.subject	Coaxial TSV
dc.subject	Time-domain
dc.subject	De-embedding
dc.title	Interposer platforms featuring polymer-enhanced through silicon vias for microelectronic systems
dc.type	Text
dc.type.genre	Dissertation
dspace.entity.type	Publication
local.contributor.advisor	Bakir, Muhannad S.
local.contributor.corporatename	School of Electrical and Computer Engineering
local.contributor.corporatename	College of Engineering
relation.isAdvisorOfPublication	752d9ed4-97ec-4a80-9920-4b4d3e762de1
relation.isOrgUnitOfPublication	5b7adef2-447c-4270-b9fc-846bd76f80f2
relation.isOrgUnitOfPublication	7c022d60-21d5-497c-b552-95e489a06569
thesis.degree.level	Doctoral