Title:
Electron Beam Induced Deposition Of Interface To Carbon Nanotube

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dc.contributor.patentcreator Fedorov, Andrei G.
dc.contributor.patentcreator Rykaczewski, Konrad
dc.date.accessioned 2017-05-12T14:26:08Z
dc.date.available 2017-05-12T14:26:08Z
dc.date.filed 5/21/2012
dc.date.issued 9/10/2013
dc.description.abstract A system and method are provided for fabricating a low electric resistance ohmic contact, or interface, between a Carbon Nanotube (CNT) and a desired node on a substrate. In one embodiment, the CNT is a Multiwalled, or Multiwall, Carbon Nanotube (MWCNT), and the interface provides a low electric resistance ohmic contact between all conduction shells, or at least a majority of conduction shells, of the MWCNT and the desired node on the substrate. In one embodiment, a Focused Electron Beam Chemical Vapor Deposition (FEB-CVD) process is used to deposit an interface material near an exposed end of the MWCNT in such a manner that surface diffusion of precursor molecules used in the FEB-CVD process induces lateral spread of the deposited interface material into the exposed end of the MWCNT, thereby providing a contact to all conduction shells, or at least a majority of the conduction shells, of the MWCNT.
dc.description.assignee Georgia Tech Research Corporation
dc.identifier.cpc H01L21/76838
dc.identifier.cpc B82Y40/00
dc.identifier.cpc H01L2221/1094
dc.identifier.patentapplicationnumber 13/476510
dc.identifier.patentnumber 8531029
dc.identifier.uri http://hdl.handle.net/1853/56805
dc.identifier.uspc 257/734
dc.title Electron Beam Induced Deposition Of Interface To Carbon Nanotube
dc.type Text
dc.type.genre Patent
dspace.entity.type Publication
local.contributor.corporatename Georgia Institute of Technology
local.relation.ispartofseries Georgia Tech Patents
relation.isOrgUnitOfPublication cc30e153-7a64-4ae2-9b1d-5436686785e3
relation.isSeriesOfPublication 0f49c79d-4efb-4bd9-b060-5c7f9191b9da
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